650-nm lasers with narrow far-field divergence with integrated optical mode expansion layers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 735-739

  Smowton, P M ^a   Lewis, G M ^a   Yin, M ^a   Summers, H D ^a   Berry, G ^a   Button, C C ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; WAVEGUIDES;

OPTICAL MODE EXPANSION LAYERS; SEMICONDUCTING ALUMINUM GALLIUM INDIUM PHOSPHIDE; SEMICONDUCTING GALLIUM INDIUM PHOSPHIDE; THRESHOLD CURRENT TEMPERATURE DEPENDENCE; VERTICAL FAR FIELD DIVERGENCE;

QUANTUM WELL LASERS;

EID: 0033123902     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788444     Document Type: Article

References (9)

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