Narrow vertical beam divergence laser diode based on longitudinal photonic band crystal waveguide

Electronics Letters

Volumn 39, Issue 24, 2003, Pages 1729-1731

  Maximov, M V ^a   Shernyakov, Yu M ^a   Novikov, I I ^a   Shchukin, V A ^a,b   Shamid, I ^c   Ledentsov, N N ^a,b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c Technology Incubator DN   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

LONGITUDINAL MODE GROUPING EFFECT; LONGITUDINAL PHOTONIC BAND CRYSTAL; NARROW VERTICAL BEAM DIVERGENCE;

QUANTUM WELL LASERS;

EID: 0344272255     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031127     Document Type: Article

References (7)

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2. McInerney, J.G., et al.: 'High-power surface-emitting semiconductor laser with extended vertical cavity', Electron. Lett., 2003, 39, pp. 523-524
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4. Lin, G., et al.: 'Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure', IEEE Photonics Technol. Lett., 1996, 8, pp. 1588-1590
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