Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 5, 2006, Pages 2246-2249

  Anderson, Travis ^a   Ren, Fan ^a   Pearton, Stephen J ^a   Mastro, Michael A ^b   Holm, Ron T ^b   Henry, Rich L ^b   Eddy Jr , Charles R ^b   Lee, Joon Yeob ^c   Lee, Kwan Young ^c   Kim, Jihyun ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

LASER DRILLING; SIGNAL CHARACTERISTICS; VIA HOLES;

CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LASER BEAM EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSCONDUCTANCE;

LASER ABLATION;

EID: 33749317916     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2335435     Document Type: Article

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