Anisotropic etching of GaAs using CCl2F2/CCl4 gases to fabricate 200 μm deep via holes for grounding MMICs

Journal of the Electrochemical Society

Volumn 150, Issue 7, 2003, Pages

  Rawal, D S ^a   Agarwal, V R ^a   Sharma, H S ^a   Sehgal, B K ^a   Gulati, R ^a   Vyas, H P ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CARBON TETRACHLORIDE; ELECTROPLATING; INDUCTANCE; METALLIZING; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MORPHOLOGY; PHOTORESISTS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SPUTTERING;

ANISOTROPIC ETCHING; DEEP VIA HOLES; PARASITIC INDUCTANCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0038783308     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1577546     Document Type: Article

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