Ohmic contacts to plasma etched n-Al 0.58Ga 0.42N

Applied Physics Letters

Volumn 89, Issue 13, 2006, Pages

  Miller, M A ^d   Mohney, S E ^d   Nikiforov, A ^a   Cargill III, G S ^b   Bogart, K H A ^c  

^a Boston University   (United States)

^b Lehigh University   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; SPECIFIC CONTACT RESISTANCE; ULTRAVIOLET LIGHT EMITTING DIODES; UNETCHED FILMS;

LIGHT EMITTING DIODES; OHMIC CONTACTS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; ULTRAVIOLET RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA ETCHING;

EID: 33749261240     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357867     Document Type: Article

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