Atomic rearrangements in HfO2/Si1-xGex interfaces

Applied Physics Letters

Volumn 89, Issue 13, 2006, Pages

  Cho, Deok Yong ^a   Oh, S J ^a   Park, Tae Joo ^b   Hwang, Cheol Seong ^b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; DEPOSITION; EPITAXIAL GROWTH; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; X RAY ANALYSIS;

ATOMIC EXCHANGES; ATOMIC LAYER DEPOSITION; ATOMIC REARRANGEMENTS; X-RAY ABSORPTION;

THIN FILMS;

EID: 33749249888     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357341     Document Type: Article

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12. -1. This short range garbles the intensities of the features in R space; the first and second shells appear much smaller than normal.
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