Optically active erbium-oxygen complexes in GaAs

Applied Physics Letters

Volumn 84, Issue 10, 2004, Pages 1683-1685

  Coutinho, J ^a   Jones, R ^b   Shaw, M J ^c   Briddon, P R ^c   Oberg S ^d  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

^d LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMICAL BONDS; CHEMICAL RELAXATION; COMPLEXATION; CRYSTAL LATTICES; ERBIUM; EXCITONS; MOLECULAR BEAM EPITAXY; OXYGEN; PARAMAGNETIC MATERIALS; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTOR DOPING; SUBSTITUTION REACTIONS;

LOCAL VIBRATIONAL MODES (LVM); PHOTOLUMINESCENCE EXCITATION (PLE);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1842476939     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1668323     Document Type: Article

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