Local structures around Er atoms in GaAs:Er,O studied by fluorescence EXAFS and photoluminescence

Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 715-721

  Ofuchi, H ^a   Kubo, T ^a   Tabuchi, M ^a   Takahei, K ^b   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ERBIUM; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; X RAY SPECTROSCOPY;

CODOPING; EXTENDED X RAY ABSORPTION FINE STRUCTURE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033700515     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00535-3     Document Type: Article

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