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Volumn 19, Issue 12, 2002, Pages 1844-1846
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Lattice disorder and photoluminescence of Er-implanted AIN crystalline films
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTALLINE MATERIALS;
ERBIUM;
III-V SEMICONDUCTORS;
ION IMPLANTATION;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTOR DOPING;
SILICON CARBIDE;
WIDE BAND GAP SEMICONDUCTORS;
CRYSTALLINE FILMS;
ENERGY;
ER+ DOPING;
FLUENCES;
IMPLANTED SAMPLES;
LATTICE DISORDERS;
MOLECULAR-BEAM EPITAXY;
OPTICALLY ACTIVE;
PHOTOLUMINESCENCE LIFETIME;
SIC SUBSTRATES;
ALUMINUM NITRIDE;
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EID: 0036906323
PISSN: 0256307X
EISSN: None
Source Type: Journal
DOI: 10.1088/0256-307X/19/12/331 Document Type: Article |
Times cited : (6)
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References (13)
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