메뉴 건너뛰기




Volumn 21, Issue 8, 2006, Pages 1026-1029

Growth temperature dependence of structural properties for single crystalline GaN films on MgAl2O4 substrates by pulsed laser deposition

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GALLIUM NITRIDE; PULSED LASER DEPOSITION; SUBSTRATES;

EID: 33749068039     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/8/007     Document Type: Article
Times cited : (12)

References (19)
  • 2
    • 0032516703 scopus 로고    scopus 로고
    • Nakamura S 1998 Science 281 956
    • (1998) Science , vol.281 , Issue.5379 , pp. 956
    • Nakamura, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.