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Volumn 21, Issue 8, 2006, Pages 1026-1029
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Growth temperature dependence of structural properties for single crystalline GaN films on MgAl2O4 substrates by pulsed laser deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTALLINE MATERIALS;
EPITAXIAL GROWTH;
GALLIUM NITRIDE;
PULSED LASER DEPOSITION;
SUBSTRATES;
CRYSTAL QUALITY;
INTERFACIAL LAYERS;
ROOM TEMPERATURE (RT);
METALLIC FILMS;
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EID: 33749068039
PISSN: 02681242
EISSN: 13616641
Source Type: Journal
DOI: 10.1088/0268-1242/21/8/007 Document Type: Article |
Times cited : (12)
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References (19)
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