Influence of activated polymer on the etching rate of silicon in CF4+H2 plasma

Vacuum

Volumn 81, Issue 3, 2006, Pages 230-233

  Knizikevicius R ^a  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

Author keywords

CF4+H2 plasma; Reactive ion etching; Silicon

Indexed keywords

EXTRAPOLATION; PLASMA ETCHING; POLYMERS; REACTION KINETICS; SILICON;

ACTIVATED POLYMERS; CF4+H2 PLASMA; ETCHING PROCESS;

REACTIVE ION ETCHING;

EID: 33749044593     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2006.03.022     Document Type: Article

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