Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells

Applied Physics Letters

Volumn 72, Issue 7, 1998, Pages 759-761

  Lugagne Delpon, E ^a   Oudar, J L ^a   Bouche N ^a   Raj, R ^a   Shen, A ^b   Stelmakh, N ^b   Lourtioz, J M ^b  

^a ORANGE LABS   (France)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRONIC PROPERTIES; ION IMPLANTATION; LIGHT ABSORPTION; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ULTRAFAST PHENOMENA;

CARRIER LIFETIME; EXCITONIC PROPERTIES; LIGHT HOLE EXCITONIC TRANSITION; NONLINEAR ABSORPTION RECOVERY; PHOTOLUMINESCENCE EXCITATION MEASUREMENT; ULTRAFAST EXCITONIC SATURABLE ABSORPTION;

NONLINEAR OPTICS;

EID: 0032003953     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120885     Document Type: Article

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