Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime

Applied Physics Letters

Volumn 82, Issue 6, 2003, Pages 856-858

  Joulaud, L ^a   Mangeney, J ^a   Lourtioz, J M ^a   Crozat, P ^a   Patriarche, G ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; POINT DEFECTS; PROTON IRRADIATION; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING KINETICS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0037428793     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1543231     Document Type: Article

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