Optical properties of ion irradiated and annealed InGaAs/GaAs quantum wells and semiconductor saturable absorber mirrors

Journal of Physics D: Applied Physics

Volumn 38, Issue 7, 2005, Pages 985-989

  Hakkarainen, T ^a   Pavelescu, E M ^a   Arstila, K ^b   Dhaka, V D S ^a   Hakulinen, T ^a   Herda, R ^a   Konttinen, J ^a   Tkachenko, N ^a   Lemmetyinen, H ^a   Keinonen, J ^b   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b UNIVERSITY OF HELSINKI   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; IONS; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

IRRADIATION DOSES; NON-LINEAR REFLECTIVITY; NON-SATURABLE LOSSES; PULSE DURATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20244387833     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/7/004     Document Type: Article

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