Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases

Journal of Applied Physics

Volumn 83, Issue 10, 1998, Pages 5469-5476

  Li, V Z Q ^a   Mirabedini, M R ^a   Hornung, B E ^a   Heinisch, H H ^a   Xu, M ^a   Batchelor, D ^a   Maher, D M ^a   Wortman, J J ^a   Kuehn, R T ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003234219     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367404     Document Type: Article

References (25)

1. T.-J. King, J. R. Pfiester, J. D. Shott, J. P. Mcvittie, and K. C. Saraswat, Tech. Dig. Int. Electron Devices Meet., 253 (1990).
2. N. Kistler and J. Woo, Tech. Dig. Int. Electron Devices Meet., 727 (1993).
3. V. Z.-Q. Li, M. R. Mirabedini, R. T. Kuehn, J. J. Wortman, and M. C. Ozturk, Tech. Dig. Int. Electron Devices Meet., 833 (1997).
4. D. T. Grider, M. C. Ozturk, S. P. Ashburn, J. J. Wortman, G. Harris, and D. Maher, J. Electron. Mater. 24, 1369 (1995).
5. T.-J. King and K. C. Saraswat, IEEE Trans. Electron Devices 41, 1581 (1994).
6. T.-J. King and K. C. Saraswat, J. Electrochem. Soc. 141, 2235 (1994).
7. H.-C. Lin, T.-G. Jung, H.-Y. Lin, C.-Y. Chang, T.-F. Lei, P. J. Wang, R.-C. Deng, J. Lin, and C.-Y. Chao, J. Appl. Phys. 74, 5395 (1993).
8. J. A. Tsai and R. Reif, Appl. Phys. Lett. 66, 1809 (1995).
9. Y. Zhong, M. C. Ozturk, D. T. Grider, J. J. Wortman, and M. A. Littlejohn, Appl. Phys. Lett. 57, 2092 (1990).
10. M. Sanganeria, D. T. Grider, M. C. Ozturk, and J. J. Wortman, J. Electron. Mater. 21, 61 (1992).
11. M. C. Ozturk, D. T. Grider, S. P. Ashburn, M. Sanganeria, and J. J. Wortman, Mater. Res. Soc. Symp. Proc. 224, 223 (1991).
12. X. Ren, M. C. Ozturk, D. T. Grider, M. Sanganeria, and S. Ashburn, Mater. Res. Soc. Symp. Proc. 303, 37 (1993).
13. H. C. Lin, C. Y. Chang, W. H. Chen, W. C. Tsai, T. C. Chang, T. G. Jung, and H. Y. Lin, J. Electrochem. Soc. 141, 2559 (1994).
14. J.-W. Kim, M.-K. Ryu, K.-B. Kim, and S.-J. Kim, J. Electrochem. Soc. 143, 363 (1996).
15. D. T. Grider, Ph.D thesis, North Carolina State University, 1993.
16. V. Z.-Q. Li, M. R. Mirabedini, R. T. Kuehn, D. Gladden, D. Batchelor, K. Christenson, J. J. Wortman, M. C. Ozturk, and D. M. Maher, 1995 MRS Fall meeting, Polycrystalline Thin Films II-Structure, Texture, Properties, and Applications, 1995, Vol. 403, p. 333.
17. J. A. Tsai and R. Reif, in Mechanisms of Thin Films Evolution, edited by S. M. Yalisove, C. V. Thompson, and D. J. Eaglesham (Material Research Society, Pittsburgh, 1994), Vol. 317, p. 603.
18. J. A. Tsai, A. J. Tang, and R. Reif, in Polycrystalline Thin Films-Structure, Texture, Properties and Applications, edited by M. Parker, J. Floro, K. Barmak, R. Sinclair, and D. A. Smith (Materials Research Society, Pittsburgh, 1994), Vol. 343, p. 679.
19. J. Holleman, A. E. T. Kuiper, and Verweij, J. Electrochem. Soc. 140, 1717 (1993).
20. X. Ren, M. C. Ozturk, J. J. Wortman, B. Zhang, D. Maher, and D. Batchelor, J. Vac. Sci. Technol. B 10, 1081 (1992).
21. V. Z.-Q. Li, M. R. Mirabedini, R. T. Kuehn, J. J. Wortman, M. C. Öztürk, D. Batchelor, K. Christensen, and D. M. Maher, Appl. Phys. Lett. 71, 3388 (1997).
22. S. Nakayama, I. Kawashima, and J. Murata, J. Electrochem. Soc. 133, 1472 (1986).
23. A. C. Adams, in VLSI Technology, edited by S. M. Sze (McGraw Hill, New York, 1983), pp. 93-129.
24. M. K. Sanganeria, K. E. Violette, M. C. Ozturk, G. Harris, and D. M. Maher, J. Electrochem. Soc. 142, 285 (1995).
25. V. Z.-Q. Li, M. R. Mirabedini, D. Venables, R. T. Kuehn, J. J. Wortman, and D. M. Maher, IEEE Trans. Electron Devices (submitted).