메뉴 건너뛰기




Volumn 43, Issue 2 A, 2004, Pages

Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors

Author keywords

Infrared photodetectors; QDIP; Quantum dots

Indexed keywords

ACTIVATION ENERGY; ELECTRONS; GROUND STATE; INFRARED DETECTORS; IONIZATION; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SILICON;

EID: 1942443633     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l167     Document Type: Article
Times cited : (12)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.