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Volumn 43, Issue 2 A, 2004, Pages
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Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors
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Author keywords
Infrared photodetectors; QDIP; Quantum dots
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Indexed keywords
ACTIVATION ENERGY;
ELECTRONS;
GROUND STATE;
INFRARED DETECTORS;
IONIZATION;
PHOTOVOLTAIC EFFECTS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR QUANTUM DOTS;
SILICON;
INFRARED PHOTODETECTORS;
QUANTUM-DOT INFRARED PHOTODETECTORS (QDIP);
INDIUM COMPOUNDS;
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EID: 1942443633
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.43.l167 Document Type: Article |
Times cited : (12)
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References (10)
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