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Volumn 84, Issue 26, 2004, Pages 5416-5418
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In situ ultraviolet treatment in an Ar ambient upon p-type hydrogenated amorphous silicon-carbide windows of hydrogenated amorphous silicon based solar cells
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
CHEMICAL VAPOR DEPOSITION;
CONTAMINATION;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CONDUCTIVITY;
ELECTRIC FIELDS;
ELECTRIC POTENTIAL;
ELLIPSOMETRY;
ENERGY GAP;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
HYDROGENATION;
SILICON CARBIDE;
HYDROGEN PLASMAS;
OPEN-CIRCUIT VOLTAGE;
OPTICAL BAND GAPS;
PHOTO-ASSISTED HYDROGEN RADICALS;
SOLAR CELLS;
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EID: 3242721527
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1767601 Document Type: Article |
Times cited : (34)
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References (14)
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