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Volumn 84, Issue 26, 2004, Pages 5416-5418

In situ ultraviolet treatment in an Ar ambient upon p-type hydrogenated amorphous silicon-carbide windows of hydrogenated amorphous silicon based solar cells

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CONTAMINATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELLIPSOMETRY; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; SILICON CARBIDE;

EID: 3242721527     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767601     Document Type: Article
Times cited : (34)

References (14)
  • 10
    • 84982788451 scopus 로고    scopus 로고
    • G. E. Jellison and F. A. Modine, Appl. Phys. Lett. 69, 371 (1996); 69, 2137 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 2137


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.