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Journal of Physics D: Applied Physics

Volumn 30, Issue 2, 1997, Pages 194-201

Properties of hydrogenated amorphous silicon carbide films prepared by a separately excited plasma CVD method

(4) Tabata, Akimori a Kuno, Yasuharu a Suzuoki, Yasuo a Mizutani, Teruyoshi a

a NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; HYDROGENATION; INFRARED SPECTROSCOPY; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; PLASMA APPLICATIONS; SILICON CARBIDE; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SEPARATELY EXCITED PLASMA CHEMICAL VAPOR DEPOSITION (SEPCVD) SYSTEM; SILICON CARBIDE FILMS;

AMORPHOUS FILMS;

EID: 0030821076 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/30/2/006 Document Type: Article

Times cited : (20)

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