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Volumn 58, Issue 12, 1998, Pages R7480-R7483

Ab initio study of the dielectric properties of silicon and gallium arsenide using polarized Wannier functions

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EID: 0041410382     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.R7480     Document Type: Article
Times cited : (29)

References (24)
  • 21
    • 26144450583 scopus 로고
    • We used the exchange-correlation functional of Ceperley-Alder as parametrized in J. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981).
    • (1981) Phys. Rev. B , vol.23 , pp. 5048
    • Perdew, J.1    Zunger, A.2
  • 23
    • 0000135087 scopus 로고
    • Published results of the high-frequency LDA dielectric constants of silicon and gallium arsenide vary between 12.7 to 12.9 and 11.3 to 13.0, respectively. These values depend on the type of pseudopotential (semilocal or fully separable), the lattice constant, and the convergence with respect to the cut-off energy and the Brillouin zone sampling. See for instance A. Dal Corso, S. Baroni, and R. Resta, Phys. Rev. B 49, 5323 (1994).
    • (1994) Phys. Rev. B , vol.49 , pp. 5323
    • Dal Corso, A.1    Baroni, S.2    Resta, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.