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Materials Science and Engineering: B

Volumn 87, Issue 3, 2001, Pages 214-221

Growth of Si twinning superlattice

(2) Hibino, H a Ogino, T a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

Crystal; Si twinning; Superlattice

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES; THERMODYNAMIC STABILITY; TWINNING;

TWINNED EPITAXIAL LAYERS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0035915284 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)00733-4 Document Type: Article

Times cited : (14)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.