Dielectric properties of hydrogen-terminated Si(111) ultrathin films

Journal of Applied Physics

Volumn 99, Issue 5, 2006, Pages

  Nakamura, Jun ^a   Ishihara, Shunsuke ^a   Natori, Akiko ^a   Shimizu, Tomo ^b   Natori, Kenji ^b  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC FIELDS; GROUND STATE; HYDROGEN; PERMITTIVITY; ULTRATHIN FILMS;

BILAYERS; DEPOLARIZATION FIELDS; DEPOLARIZED CHARGES; POSITION-DEPENDENT MACROSCOPIC FIELDS;

SEMICONDUCTING SILICON;

EID: 33645243405     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2178703     Document Type: Article

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