Energy barrier for dimer flipping at the Si(001)-(2×1) surface in external electric fields

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 11, 2005, Pages

  Nakamura, Jun ^a   Natori, Akiko ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; COMPARATIVE STUDY; DIMERIZATION; ELECTRIC FIELD; ELECTRICITY; ENERGY; LOW TEMPERATURE; MATHEMATICAL MODEL; MOLECULAR STABILITY; SCANNING TUNNELING MICROSCOPY; SURFACE PROPERTY; TEMPERATURE DEPENDENCE;

EID: 20044385472     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.113303     Document Type: Article

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