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Volumn 49, Issue 3, 2005, Pages 329-341

On the optimization and design of SiGe HBT cascode low-noise amplifiers

Author keywords

Cascode; Input third order intercept point (IIP3); LNA; Noise figure; SiGe HBTs; Volterra series

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC NETWORK TOPOLOGY; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING SILICON; SIGNAL DISTORTION; SPURIOUS SIGNAL NOISE;

EID: 12344291973     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.10.002     Document Type: Article
Times cited : (4)

References (12)
  • 1
    • 0031381087 scopus 로고    scopus 로고
    • A 12 mW wide dynamic range CMOS front-end for a portable GPS receiver
    • A.R. Shahani, D.K. Shaeffer, and T.H. Lee A 12 mW wide dynamic range CMOS front-end for a portable GPS receiver IEEE J. Solid-State Circ. 32 1997 2061
    • (1997) IEEE J. Solid-State Circ. , vol.32 , pp. 2061
    • Shahani, A.R.1    Shaeffer, D.K.2    Lee, T.H.3
  • 3
  • 4
    • 0000565246 scopus 로고    scopus 로고
    • High-frequency nonlinearity analysis of common-emitter and differential-pair transconductance stages
    • K.L. Fong, and R.G. Meyer High-frequency nonlinearity analysis of common-emitter and differential-pair transconductance stages IEEE J. Solid-State Circ. 33 1998 548
    • (1998) IEEE J. Solid-State Circ. , vol.33 , pp. 548
    • Fong, K.L.1    Meyer, R.G.2
  • 6
    • 0036309636 scopus 로고    scopus 로고
    • Geometry and bias current optimization for SiGe HBT cascode low-noise amplifiers
    • Liang QQ, Niu GF, Cressler JD, Talyor S, Harame DL. Geometry and bias current optimization for SiGe HBT cascode low-noise amplifiers. IEEE MTT RFIC 2002;Symp-2002:407
    • (2002) IEEE MTT RFIC , vol.SYMP-2002 , pp. 407
    • Liang, Q.Q.1    Niu, G.F.2    Cressler, J.D.3    Talyor, S.4    Harame, D.L.5
  • 8
    • 0032665016 scopus 로고    scopus 로고
    • Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBTs
    • G.F. Niu, J.D. Cressler, S.M. Zhang, U. Gogineni, and D.C. Ahlgren Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBTs IEEE Trans. Electron Dev. 46 1999 1007
    • (1999) IEEE Trans. Electron Dev. , vol.46 , pp. 1007
    • Niu, G.F.1    Cressler, J.D.2    Zhang, S.M.3    Gogineni, U.4    Ahlgren, D.C.5
  • 12
    • 0342572612 scopus 로고    scopus 로고
    • High-frequency analysis of linearity improvement technique of common-emitter transconductance stage using a low-frequency-trap network
    • K.L. Fong High-frequency analysis of linearity improvement technique of common-emitter transconductance stage using a low-frequency-trap network IEEE J. Solid-State Circ. 35 2000 1249
    • (2000) IEEE J. Solid-State Circ. , vol.35 , pp. 1249
    • Fong, K.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.