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Volumn 600, Issue 17, 2006, Pages 3496-3501
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Initial stage of nitridation on Si(1 0 0) surface using low-energy nitrogen ion implantation
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Author keywords
Ion implantation; Silicon nitride; Synchrotron radiation photoemission spectroscopy
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Indexed keywords
ANNEALING;
ION IMPLANTATION;
PHOTOEMISSION;
SILICON NITRIDE;
SPECTROSCOPIC ANALYSIS;
SYNCHROTRON RADIATION;
LOW-ENERGY ELECTRON DIFFRACTION (LEED);
PHOTOEMISSION SPECTROSCOPY (PES);
SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;
SURFACE STRUCTURE;
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EID: 33748307398
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2006.07.015 Document Type: Article |
Times cited : (6)
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References (22)
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