Characterization of the Ba(SnxTi1-x)O3 thin films prepared by radio frequency magnetron sputtering

Materials Science and Engineering: A

Volumn 433, Issue 1-2, 2006, Pages 279-285

  Huang, Hong Hsin ^a   Wang, Moo Chin ^b   Chen, Chung Yuan ^c   Wu, Nan Chung ^c   Lin, Huey Jiuan ^d  

^a CHENG SHIU UNIVERSITY   (Taiwan)

^b KAOHSIUNG MEDICAL UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d NATIONAL UNITED UNIVERSITY   (Taiwan)

Author keywords

Ba(SnxTi1 x)O3 thin films; Dielectric materials; Refractive index; RF sputter

Indexed keywords

AMORPHOUS FILMS; BARIUM COMPOUNDS; FILM PREPARATION; MAGNETRON SPUTTERING; PERMITTIVITY; REFLECTION; REFRACTIVE INDEX; SPUTTER DEPOSITION; X RAY DIFFRACTION;

RADIO FREQUENCY MAGNETRON SPUTTERING;

DIELECTRIC FILMS;

AMORPHOUS FILMS; BARIUM COMPOUNDS; DIELECTRIC FILMS; FILM PREPARATION; MAGNETRON SPUTTERING; PERMITTIVITY; REFLECTION; REFRACTIVE INDEX; SPUTTER DEPOSITION; X RAY DIFFRACTION;

EID: 33748141632     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2006.06.095     Document Type: Article

References (33)

1. Cha S.Y., Lee S.H., and Lee H.C. Integr. Feroelectr. 16 (1997) 183-190
2. Kotechi D.K. Integr. Feroelectr. 16 (1997) 1-19
3. Wang M.C., Hsiao F.Y., His C.S., and Wu N.C. J. Cryst. Growth 246 (2002) 78-84
4. Chang L.H., and Anderson W.A. Appl. Surf. Sci. 92 (1996) 52-56
5. Li P., and Lu T.M. Phys. Rev. 43 (1991) 14261-14264
6. Hu H., and Krupamidhi S.B. Appl. Phys. Lett. 61 (1992) 1246-1248
7. Wang M.C., Chen C.Y., Hsi C.S., and Wu N.C. J. Euro. Ceram. Soc. 23 (2003) 2307-2314
8. Hsi C.S., Chen C.Y., Wu N.C., and Wang M.C. J. Appl. Phys. 93 (2003) 598-604
9. Hsi C.S., Shiao F.Y., Wu N.C., and Wang M.C. Solid State Commu. 125 (2003) 633-636
10. Dietz G.W., Schumacher M., Waser R., Streiffer S.K., Basceiri C., and Kingon A.I. J. Appl. Phys. 82 (1997) 2359-2364
11. Abe K., and Komatsu S. J. Appl. Phys. 77 (1995) 6461-6465
12. Horikawa T., Mikami N., Makita T., Tanimura J., Kataoka M., Sato K., and Nunoshita M. Jpn. J. Appl. Phys. 32 (1993) 4126-4130
13. Torii K. Ferroelectrics 152 (1994) 157-162
14. Wang M.C., Tsai C.C., Wu N.C., and Hung K.M. J. Appl. Phys. 92 (2002) 2100-2107
15. Smolensky G.A. J. Inorg. Chem. Moscow 1 (1956) 1402
16. Yasuda N., Ohwa H., and Asano A. Jpn. J. Appl. phys. 35 (1996) 5099-5103
17. Oh K., Uchino K., and Cross L.E. J. Am. Ceram. Soc. 77 (1994) 2809-2816
18. Xiaoyong W., Yujun F., and Xi Y. Appl. Phys. Lett. 83 (2003) 2031-2033
19. Mueller V., Beize H., and Abicht H.-P. Appl. Phys. Lett. 84 (2004) 1341-1343
20. Wei X., Feng Y., Hang L., and Yao X. Ceram. Inter. 30 (2004) 1401-1404
21. Wei X., Feng Y., Wang X., and Yao X. Ceram. Inter. 30 (2004) 1397-1400
22. Chang W.K., Hsieh S.F., Lee Y.H., Chen K.N., Wu N.C., and Wang A.A. J. Mater. Sci. 33 (1998) 1765-1768
23. Mueller V., Beize H., Abicht H.P., and Eisenschmidt C. J. Mater. Res. 19 (2004) 2834-2840
24. Pratt J.H., and Firestone S. J. Vac. Sci. Technol. 8 (1971) 256-260
25. Yoon K.H., Kim J.H., Jo K.H., Song H.I., Yoon S.O., and Kim C.S. J. Mater. Sci. 23 (1998) 61-64
26. Wang M.C., Chen C.Y., Hsi C.S., and Wu N.C. J. Cryst. Growth 246 (2002) 99-107
27. Grycy B., Gross B., and Miklossy E. Non-Equilibrium Processes in Plasma Technology (1969), Elsevier Science Publishers, B.V., Amsterdam p. 354
28. Hoffman D.W. Thin Solid Films 107 (1983) 353-358
29. Rossngel S.M. J. Vac. Sci. Technol. A6 (1988) 19-24
30. Kester D.J., and Mesier R. J. Mater. Res. 8 (1993) 1928-1937
31. Tahar R.B.H., Bam T., Ohya Y., and Takahashi Y. J. Appl. Phys. 83 (1998) 2631-2645
32. Torii K., Kaga I., and Takeda E. Jpn. J. Appl. Phys. 31 (1992) 2989-2991
33. Pasierb P., Komormick S., and Radecha M. Thin Solid Films 324 (1998) 134-140