Ti thickness effects in Pt/Ti bottom electrode on properties of (Ba,Sr)TiO3 thin film

Integrated Ferroelectrics

Volumn 16, Issue 1-4, 1997, Pages 183-190

  Cha, Seon Yong ^a   Lee, Seung Hoon ^a   Lee, Hee Chul ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CURRENT DENSITY; ELECTRODEPOSITION; ELECTRODES; FERROELECTRIC MATERIALS; INTERDIFFUSION (SOLIDS); LEAKAGE CURRENTS; MORPHOLOGY; PERMITTIVITY; PLATINUM; THIN FILMS; TITANIUM;

BARIUM STRONTIUM TITANATE; ELECTRON BEAM EVAPORATION;

DIELECTRIC FILMS;

EID: 0031333233     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708013040     Document Type: Article

References (6)

1. J.O. Olowolafe, R.E. Jones, Jr., A.C. Campbell, R.I. Hedge, C.J. Mogab and R.B. Gregory, J. Appl. Phys. 73, 1764 (1993)
2. R.E. Jones, Jr. et al., Integrated Ferroelectrics, 1995, Vol. 6, pp. 81-92
3. K. Sreenivas, Ian Reaney, T. Maeder, N. Setter, C. Jagadish and R.G. Elliman, J. Appl. Phys. 75, 232 (1994)
4. TAKASHI HASE, TOSHIYUKI SAKUMA, KAZUSHI AMANUMA, Toru MORI, Atsushi OCHI and YOICHI MIYASAKA, Integrated Ferroelctrics, 1995, Vol. 8, pp. 89-98
5. H.N. Al-Shareef, K.D. Gifford, S.H. Rou, P.D. Hern, O. Auciello and A.I. Kingon, Integrated Ferroelectrics, 1993, Vol. 3, pp. 321-332
6. SHYAM P. MURARKA, Metallization Theory and Practice for VLSI and ULSI (Butterworth-Heinemann, Boston, 1993) Chap. 5, p. 65