Size uniformity of InAs dots on mesa-structure templates on (001) InP substrates grown by droplet metal-organic vapor phase epitaxy method

Applied Physics Letters

Volumn 89, Issue 8, 2006, Pages

  Ujihara, T ^a   Yoshida, Y ^a   Lee, W S ^a   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

GROWTH TECHNIQUES; MESA-STRUCTURE TEMPLATES; SIZE UNIFORMITY; TEMPLATES CONTROL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33747845842     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337989     Document Type: Article

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