InAs dots grown on InP (001) by droplet hetero-epitaxy using OMVPE

Materials Science and Engineering B

Volumn 51, Issue 1-3, 1998, Pages 118-121

  Nonogaki, Y ^a   Iguchi, T ^a   Fuchi, S ^a   Fujiwara, Y ^a   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Droplet hetero epitaxy; InAs dots; InP (001); OMVPE

Indexed keywords

ATOMIC FORCE MICROSCOPY; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS;

DROPLET HETERO EPITAXY; FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0348117152     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00242-0     Document Type: Article

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