Formation of InAs islands on InP (001) by droplet hetero-epitaxy

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 665-669

  Nonogaki, Y ^a   Iguchi, T ^a   Fujiwara, Y ^a   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Droplet heteroepitaxy; InAs island; OMVPE; TBAs; TBP

Indexed keywords

ATOMIC FORCE MICROSCOPY; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

LOW PRESSURE ORGANOMETALLIC VAPOR PHASE EPITAXY; TERTIARYBUTYLARSINE; TRIMETHYLINDIUM;

HETEROJUNCTIONS;

EID: 0031548373     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80161-4     Document Type: Article

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