Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5 μm on InP(3 1 1)B substrates

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 329-334

  Caroff, P ^a   Platz, C ^a   Dehaese, O ^a   Paranthoen C ^a   Bertru, N ^a   Le Corre, A ^a   Loualiche, S ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

A1. Low dimensional structures; A2. Molecular beam epitaxy; A3. Quantum dot lasers

Indexed keywords

CRYSTAL GROWTH; INTERFACES (MATERIALS); MODIFICATION; MOLECULAR BEAM EPITAXY; MONOLAYERS; OPTICAL COMMUNICATION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

BANDGAP; LOW-DIMENSIONAL STRUCTURES; QUANTUM DOT LASERS; QUARTERNARY ALLOYS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18444375312     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.039     Document Type: Conference Paper

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