Cu electroless deposition onto Ta substrates application to create a seed layer for Cu electrodeposition

Electrochemical and Solid-State Letters

Volumn 9, Issue 10, 2006, Pages

  Lee, Chang Hwa ^a   Hwang, Soonsik ^a   Kim, Sang Chul ^b   Kim, Jae Jeong ^a  

^a Seoul National University   (South Korea)

^b Dongbu Hannong Chemical Co   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; COPPER; OXYGEN; PALLADIUM; PHYSICAL VAPOR DEPOSITION; SUBSTRATES; SURFACE ROUGHNESS; TANTALUM;

CONFORMAL LAYERS; COPPER ELECTROLESS DEPOSITION (ELD); DILUTED ELECTROLYTE; OXYGEN INCORPORATION;

ELECTROLESS PLATING;

EID: 33747670897     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2225726     Document Type: Article

References (19)

1. D. C. Edelstein, in Proceedings of the 12th International IEEE VLSI Multilevel Interconnection Conference, IEEE, p. 301 (1995).
2. P. C. Andricacos, C. Uzoh, J. O. Dukovic, J. Horkans, and H. Deligianni, IBM J. Res. Dev., 42, 567 (1998).
3. U. Landau, in Chemical Mechanical Planarization IV, R. L. Opila, C. Reidsema-Simpson, K. B. Sundaram, and S. Seal, Editors, FV 2000-26, p. 231, The Electrochemical Society Proceedings Series, Pennington, NJ (2000).
4. R. L. Jackson, E. Broadbent, T. Cacouris, A. Harrus, M. Bilberger, E. Patton, and T. Walsh, Solid State Technol., 41, 49 (1998).
5. A. C. West, S. Mayer, and J. Reid, Electrochem. Solid-State Lett., 4, C50 (2001).
6. T. P. Moffat, J. E. Bonevich, W. H. Huber, A. Stanishevsky, D. R. Kelly, G. R. Stafford, and D. Josell, J. Electrochem. Soc., 147, 4524 (2000).
7. T. Andryuschenko and J. Reid, in Proceedings of the Interconnect Technology Conference, 2001, IEEE, p. 33 (2001).
8. K.-K. Choi and S.-W. Rhee, Thin Solid Films, 397, 70 (2001).
9. C. Jezewski, W. A. Lanford, C. J. Wiegand, J. P. Singh, P.-I. Wang, J. J. Senkevich, and T.-M. Lua, J. Electrochem. Soc., 152, C60 (2005).
10. J. J. Kim, S.-K. Kim, C. H. Lee, and Y. S. Kim, J. Vac. Sci. Technol. B, 21, 33 (2003).
11. Y. Shacham-Diamand, Electrochem. Solid-State Lett., 3, 279 (2000).
12. Y. Shacham-Diamand and V. M. Dubin, Microelectron. Eng., 33, 47 (1997).
13. S.-Y. Chang, C.-J. Hsu, R.-H. Fang, and S.-J. Lin, J. Electrochem. Soc., 150, C603 (2003).
14. Z. Wang, O. Taegashi, H. Sakaue, T. Takahagi, and S. Shingubara, Jpn. J. Appl. Phys., Part 1, 42, L1223 (2003).
15. J. J. Kim and S. H. Cha, Jpn. J. Appl. Phys., Part 1, 40, 7151 (2001).
16. C. H. Lee and J. J. Kim, J. Vac. Sci. Technol. B, 23, 475 (2005).
17. C. H. Seah, S. Mridha, and L. H. Chan, J. Vac. Sci. Technol. A, 17, 1963 (1999).
18. M. Oita, M. Matsuoka, and C. Iwakura, Electrochim. Acta, 42, 1435 (1997).
19. J. Shu, B. P. A. Grandjean, and S. Kaliaguine, Ind. Eng. Chem. Res., 36, 1632 (1997).