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Volumn 41, Issue 3, 1998, Pages 49-59

Processing and integration of copper interconnects

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; COPPER; ELECTROPLATING; THIN FILMS;

EID: 0032010585     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (57)

References (13)
  • 1
    • 0002625387 scopus 로고    scopus 로고
    • IC makers confront RC limitations
    • August 4
    • L. Gwennap, "IC makers confront RC limitations," Microprocessor Report, August 4, 1997.
    • (1997) Microprocessor Report
    • Gwennap, L.1
  • 3
    • 0000536492 scopus 로고    scopus 로고
    • A high-performance 1.8 V, 0.20-}mum CMOS technology with copper metallization
    • IEEE New York, 1997 E31-2, Dec.
    • S. Venkatesan, et al., "A high-performance 1.8 V, 0.20-}mum CMOS technology with copper metallization," Proceedings of IEDM, (IEEE New York, 1997) E31-2, Dec., 1997.
    • (1997) Proceedings of IEDM
    • Venkatesan, S.1
  • 6
    • 0029547914 scopus 로고
    • Interconnect scaling - The real limiter to high performance ULSI
    • Dec. (IEEE, New York, 1995)
    • M. T. Bohr, "Interconnect scaling - the real limiter to high performance ULSI," Proceedings of the International Electron Devices Meeting (IEDM), pp. 241-244, Dec. 1995 (IEEE, New York, 1995).
    • (1995) Proceedings of the International Electron Devices Meeting (IEDM) , pp. 241-244
    • Bohr, M.T.1
  • 8
    • 0008988230 scopus 로고
    • Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
    • K. Holloway, et al., "Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions," J. Appl. Phys., 71, 5433-5444, 1992.
    • (1992) J. Appl. Phys. , vol.71 , pp. 5433-5444
    • Holloway, K.1
  • 9
    • 0038140936 scopus 로고    scopus 로고
    • Comparative study of tantalum and tantalum nitrides as a diffusion barrier for Cu metallization
    • K.-H. Min, K.-C. Chun, K.-B. Kim, "Comparative study of tantalum and tantalum nitrides as a diffusion barrier for Cu metallization," J. Vac. Sci. Technol. B 14, 3263-3269.
    • J. Vac. Sci. Technol. B , vol.14 , pp. 3263-3269
    • Min, K.-H.1    Chun, K.-C.2    Kim, K.-B.3
  • 10
    • 24644488361 scopus 로고    scopus 로고
    • Liner conformality in ionized magnetron sputter metal deposition processes
    • S. Hamaguchi, S. Rossnagel, "Liner conformality in ionized magnetron sputter metal deposition processes," J. Vac. Sci. Tech. B 14, 2603-2608. 1996.
    • (1996) J. Vac. Sci. Tech. B , vol.14 , pp. 2603-2608
    • Hamaguchi, S.1    Rossnagel, S.2
  • 11
    • 0030393173 scopus 로고    scopus 로고
    • Effectiveness and reliability of metal diffusion barriers for copper interconnects
    • Materials Research Society, Pittsburgh
    • G. Bai, et al., "Effectiveness and reliability of metal diffusion barriers for copper interconnects," Mat. Res, Soc. Symp. Proc., Vol. 403, Materials Research Society, Pittsburgh, pp. 501-506, 1996.
    • (1996) Mat. Res, Soc. Symp. Proc. , vol.403 , pp. 501-506
    • Bai, G.1
  • 12
    • 0347852738 scopus 로고
    • Metal dishing and oxide erosion in the chemical mechanical polishing of copper used for pattern delineation
    • R. Blumenthal, G. Janssen, eds., Materials Research Society, Pittsburgh
    • J. M. Steigerwald, et al., "Metal dishing and oxide erosion in the chemical mechanical polishing of copper used for pattern delineation," Proceedings of the Conference on Advanced Metallization for ULSI Applications in 1994, R. Blumenthal, G. Janssen, eds., Materials Research Society, Pittsburgh, pp. 55-60, 1995.
    • (1995) Proceedings of the Conference on Advanced Metallization for ULSI Applications in 1994 , pp. 55-60
    • Steigerwald, J.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.