Enhanced diffusion of high-temperature implanted aluminum in silicon carbide

Materials Research Society Symposium - Proceedings

Volumn 396, Issue , 1996, Pages 239-242

  Suvorov, A V ^a   Usov, I O ^a   Sokolov, V V ^a   Suvorova, A A ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL STRUCTURE; DIFFUSION IN SOLIDS; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); ION IMPLANTATION; MICROSTRUCTURE; RADIATION EFFECTS; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

HIGH TEMPERATURE IMPLANTATION; RADIATION ENHANCED DIFFUSION; THERMALLY ACTIVATED DIFFUSION COEFFICIENT;

SILICON CARBIDE;

EID: 0029705605     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)