Theoretical model and computer simulation results of enhanced diffusion of high-temperature implanted aluminum in silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 142, Issue 3, 1998, Pages 313-318

  Gadiyak, G V ^a  

^a INSTITUTE OF COMPUTATIONAL TECHNOLOGIES   (Russian Federation)

Author keywords

Defects; High temperature; Implant dose; Ion implantation; Numerical simulation; Silicon carbide

Indexed keywords

ALUMINUM; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CURRENT DENSITY; DIFFUSION IN SOLIDS; ION BOMBARDMENT; ION IMPLANTATION; MATHEMATICAL MODELS; REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

MACROSCOPIC KINETIC MODEL;

SEMICONDUCTING FILMS;

EID: 0032120255     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00253-5     Document Type: Article

References (11)

1. A.V. Suvorov, I.O. Usov, V.V. Sokolov, A.A. Suvorova, in: D.B. Poker, D. Ila, Y.-S. Cheng, L.R. Harriot, T.W. Sigmon (Eds.), Ion-Solid Interaction for Materials Modification and Processing, Proc. Mater. Res. Soc. Symp. 396, Pittsburgh, PA, 1996, pp. 239-242.
2. J.A. Edmond, S.P. Withrow, W. Wadin, R.F. Davis, in: John D. Dow, Ivan K. Schuller (Eds.), Interfaces, Superlattices, and Thin Films, Proc. Mater. Res. Soc. 77, Pittsburgh, PA, 1987, pp. 193-198.
3. W. Suttrop, H. Zhang, M. Schadt, G. Pensl, K. Donuke, S. Leibenzeder, in: C.Y. Yang, M.M. Rahman, G.L. Harris (Eds.), Amorphous and Crystalline Silicon Carbide 4, Springer Proceeding in Physics 71, Springer, Berlin, 1992, pp. 143-148.
4. G.V. Gadiyak, A.V. Bibik, Proceedings of the International Conference Ion Beam Modification of Materials, Canberra, 1996, p. 810.
5. V.V. Kozlovskii, V.N. Lomasov, Sov. Phys. Semicond. 21 (1987) 220.
6. P.A. Aleksandrov, E.K. Baranova, V.V. Beloshitskii, K.D. Demakov, V.A. Starostin, Radiat. Eff. 88 (1986) 249.
7. D. Mathiot, J.C. Pfister, J. Appl. Phys. 55 (1984) 3518.
8. G.V. Gadiyak, G.A. Kachurin, I.E. Tyschenko, V.V. Shatrov, Sov. Phys. Semicond. 26 (1992) 1111.
9. G.V. Gadiyak, V.G. Gadiyak, M.L. Kosinova, E.G. Salman, Appl. Surf. Sci. (Japan) 113/114 (1997) 647.
10. A.V. Suvorov, private communication.
11. L.N. Alexsandrov, T.V. Bondareva, G.A. Kachurin, I.E. Tyschenko, Sov. Phys. Semicond. 25 (1991) 323.