|
Volumn 504, Issue , 1999, Pages 141-146
|
Mechanism of enhanced diffusion of aluminum in 6H-SiC in the process of high-temperature ion implantation
a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ALUMINUM;
COMPOSITION EFFECTS;
DIFFUSION IN SOLIDS;
GETTERS;
HIGH TEMPERATURE PROPERTIES;
SECONDARY ION MASS SPECTROMETRY;
SILICON CARBIDE;
THERMAL EFFECTS;
GETTERING RELATED PEAK;
ION IMPLANTATION;
|
EID: 0032632586
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (4)
|
References (10)
|