Organic single crystal transistors: Interface modification with SAMs and double gate structure

Molecular Crystals and Liquid Crystals

Volumn 455, Issue 1, 2006, Pages 277-285

  Iwasa, Yoshihiro ^c   Asanuma, Haruhiko ^d   Shimotani, Hidekazo ^d   Takenobu, Taishi ^d   Nishikawa, Takao ^a   Takeya, Jun ^b  

^a SEIKO EPSON CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d NONE

Author keywords

Double gate FET; Interface doping; Organic single crystal transistor; Self assembled monolayer

Indexed keywords

DOUBLE GATE FET; INTERFACE DOPING; ORGANIC SINGLE CRYSTAL TRANSISTORS; SELF-ASSEMBLED MONOLAYERS;

CARRIER CONCENTRATION; ELECTRODES; MONOLAYERS; OXIDES; SELF ASSEMBLY; SINGLE CRYSTALS;

FIELD EFFECT TRANSISTORS;

EID: 33747589255     PISSN: 15421406     EISSN: 15635287     Source Type: Journal    
DOI: 10.1080/15421400600698691     Document Type: Conference Paper

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