Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma

Journal of University of Science and Technology Beijing: Mineral Metallurgy Materials (Eng Ed)

Volumn 13, Issue 3, 2006, Pages 272-276

  Li, Xueming ^a   Yang, Size ^b   Wu, Xingfang ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

Chemical bonding state; Pulsed high energy density plasma; Silicon carbide nitride

Indexed keywords

BINDING ENERGY; COMPOSITION; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL BONDING STATE; PULSED HIGH ENERGY DENSITY PLASMA; SILICON CARBIDE NITRIDE;

FILM PREPARATION;

EID: 33747394735     PISSN: 10058850     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1005-8850(06)60057-1     Document Type: Article

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