A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

Solid-State Electronics

Volumn 50, Issue 7-8, 2006, Pages 1341-1348

  Chen, Bae Horng ^a,b   Wei, Jeng Hua ^c   Lo, Po Yuan ^a   Wang, Hung Hsiang ^a   Lai, Ming Jinn ^a   Tsai, Ming Jinn ^a   Chao, Tien Sheng ^b   Lin, Horng Chih ^b   Huang, Tiao Yuan ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c CHING YUN UNIVERSITY   (Taiwan)

Author keywords

Ambipolar CNT FETs; Carbon nanotube field effect transistor (CNT FET); Double gate CNT FET; Modulate; n or p type

Indexed keywords

BAND STRUCTURE; CARBON NANOTUBES; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTROSTATICS; PHYSICAL PROPERTIES;

AMBIPOLAR CNT-FETS; CARBON NANOTUBE FIELD EFFECT TRANSISTOR (CNT-FET); DOUBLE-GATE CNT-FET; MODULATE; N- OR P-TYPE;

FIELD EFFECT TRANSISTORS;

EID: 33747184510     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.05.026     Document Type: Article

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