Micro structure and reliability of copper interconnects

IEEE Transactions on Electron Devices

Volumn 46, Issue 6, 1999, Pages 11131120-

  Ryu, Changsup ^a,d   Kwon, Kee Won ^b   Loke, Alvin L S ^c   Lee, Haebum ^b   Nogami, Takeshi ^b   Dubin, Valéry M ^d   Kavari, Rahim A ^e   Ray, Gary W ^f   Simon Wong, S ^g  

^a IEEE   (United States)

^b Stanford University   (United States)

^c MOTOROLA INC   (United States)

^d HEWLETT PACKARD COMPANY   (United States)

^e One AMD Place   (United States)

^f SONY CORPORATION   (Japan)

^g Portland Technology Development   (United States)

Author keywords

Copper; Electromigration; Integrated circuit interconnections; Materials reliability; Reliability testing

Indexed keywords

EID: 33747167909     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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