Self-Annealing of electrochemically deposited copper films in advanced interconnect applications

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 166-168

  Ritzdorf, T ^a   Graham, L ^a   Jin, S ^b   Mu, C ^b   Fraser, D ^b  

^a Semitool Incorporated   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; COPPER; ELECTRODEPOSITION; GRAIN GROWTH; METALLIC FILMS;

ANNEALING EFFECTS; COPPER FILMS; FILM STRESS; INTERCONNECT APPLICATIONS; SELF-ANNEALING; TIME DEPENDENCE;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 85037492583     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704781     Document Type: Conference Paper

References (9)

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