A unified simulation of schottky and ohmic contacts

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 103108-

  Matsuzawa, Kazuya ^a   Uchida, Ken ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Device simulation; Ohmic; Salicide; Schottky

Indexed keywords

EID: 33747093422     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

1. C. R. CrowellandS. M. Sze "Current transport in metalsemiconductor barriers" SolidState Electron. vol. 9 p. 1035 1966.
2. J. Adams and T.W. Tang "A revised boundary condition for the numerical analysis of Schottky barrier diodes" IEEE Electron Device Lett. vol. EDE7 p. 525 1986.
3. A. Shibkov M. Ershov and V. Ryzhii "Numerical simulation of carrier transport in Schottky barrier diodes" Electron. Lett. vol. 28 p. 1841 1992.
4. J. M. Andrews and M. P. Eepselter "Reverse currentvoltage characteristics of metalsuicide Schottky diodes" SolidState Electron. vol. 13 p. 1011 1970.
5. J. Racko D. Donoval M. Bedlek M. Barus A. Satka and J. Hromcova "New boundary conditions for the simulation of Schottky structure characteristics" SolidState Electron. vol. 36 p. 1790 1993.
6. H. Hjelmgren "Numerical modeling of hot electrons in nGaAs Schottkybarrier diodes" IEEE Trans. Electron Devices vol. 37 p. 1228 1990.
7. A. Schenk and S. Muller "Analytical model of the metalsemiconductor contact for device simulation" Simul. Semicond. Devices Processes vol. 5 p. 441 1993.
8. D. Schroeder and U. Witkowski "Simulation of semiconductor devices with nonideal metallic contacts" IEEE Trans. Electron Devices vol. 44 p. 679 1997.
9. J. R. Tucker C. Wang and P. S. Carney "Silicon fieldeffect transistor based on quantum tunneling" Appl. Phys. Lett. vol. 65 p. 618 1994.
10. R. Hattori and J. Shirafuji "Numerical simulation of tunnel effect transistors employing internal field emission of Schottky barrier junction" Jpn. J. Appl. Phys. vol. 33 p. 612 1994.
11. C.K. Huang W. E. Zhang and C. H. Yang "Twodimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm" IEEE Trans. Electron Devices vol. 45 p. 842 1998.
12. K. K. Ng and R. Liu "On the calculation of specific contact resistivity on <100> Si" IEEE Trans. Electron Devices vol. 37 p. 1535 1990.
13. Y.S. LouandC.Y Wu "The effects of impurity bands on the electrical characteristics of metalsemiconductor ohmic contacts" SolidState Electron. vol. 38 p. 163 1970.
14. K. Matsuzawa K. Uchida and A. Nishiyama "Simulations of Schottky barrier diodes and tunnel transistors" in Ext. Abst. IWCE 1998 p. 163.
15. R. van Overstraeten "Measurement of the ionized rates in diffused silicon pn junctions" SolidState Electron. vol. 13 p. 583 1970.
16. INSPEC "Property of silicon" 4 ser. EMIS Datareviews Series 1988.
17. M. Nishisaka and T. Asano "Reduction of the floatingbody effect in SOI MOSFETs by using Schottky source/drain contacts" Ext. Abst. SSDM p. 160 1997.