The effects of impurity bands on the electrical characteristics of metal-semiconductor ohmic contacts

Solid State Electronics

Volumn 38, Issue 1, 1995, Pages 163-169

  Lou, Yung Song ^a   Wu, Ching Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TUNNELING; ELECTRONS; FERMI LEVEL; MATHEMATICAL MODELS; PROBABILITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BAND EDGE TAILING; CARRIER POPULATION; DOPING CONCENTRATION; HIGH DOPING EFFECTS; IMPURITY BANDS; METAL SEMICONDUCTOR OHMIC CONTACTS; SCALED DOWN DEVICES; TRANSMISSION PROBABILITY; TUNNELING CURRENT DENSITY;

OHMIC CONTACTS;

EID: 0029232679     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)E0048-J     Document Type: Article

References (17)

1. MOS Device and technology constraints in VLSI
2. The impact of intrinsic series resistance on MOSFET scaling
3. Broadening of Impurity Bands in Heavily Doped Semiconductors
4. Current crowding and misalignment effects as sources of error in contact resistivity measurements—Part II: Experimental results and computer simulation of self-aligned test structures