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Volumn 37, Issue 6, 1990, Pages 1535-1537

On the Calculation of Specific Contact Resistivity on 〈 100 〉 Si

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025446622     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.106252     Document Type: Article
Times cited : (69)

References (13)
  • 1
    • 0023310827 scopus 로고
    • The impact of intrinsic series resistance on MOSFET scaling
    • K. K. Ng and W. T. Lynch, “The impact of intrinsic series resistance on MOSFET scaling,” IEEE Trans. Electron Devices, vol. ED-34, no. 3, p. 503, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , Issue.3 , pp. 503
    • Ng, K.K.1    Lynch, W.T.2
  • 2
    • 0015094463 scopus 로고
    • Specific contact resistance of metal-semiconductor barriers
    • C. Y. Chang, Y. K. Fang, and S. M. Sze, “Specific contact resistance of metal-semiconductor barriers,” Solid-Stale Electron., vol. 14. p. 541. 1971.
    • (1971) Solid-Stale Electron. , vol.14 , pp. 541
    • Chang, C.Y.1    Fang, Y.K.2    Sze, S.M.3
  • 3
    • 0014362854 scopus 로고
    • Ohmic contacts to silicon
    • Ed, New York, NY: Electrochem. Soc.
    • M. P. Lepselter and J. M. Andrews, “Ohmic contacts to silicon,” in Ohmic Contacts to Semiconductors, B. Schwartz. Ed. New York, NY: Electrochem. Soc., 1969. p. 159.
    • (1969) Ohmic Contacts to Semiconductors , pp. 159
    • Lepselter, M.P.1    Andrews, J.M.2
  • 4
    • 0014735482 scopus 로고
    • Electron tunneling and contact resistance of metal-silicon contact barriers
    • A. Y. C. Yu, “Electron tunneling and contact resistance of metal-silicon contact barriers,” Solid-State Electron., vol. 13, p. 239, 1970.
    • (1970) Solid-State Electron. , vol.13 , pp. 239
    • Yu, A.Y.C.1
  • 5
    • 0003008444 scopus 로고
    • Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers
    • C. R. Crowell and V. L. Rideout, “Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers,” Solid-Stale Electron., vol. 12. p. 89. 1969.
    • (1969) Solid-Stale Electron. , vol.12 , pp. 89
    • Crowell, C.R.1    Rideout, V.L.2
  • 6
    • 0001062092 scopus 로고
    • Field and thermionic-field emission in Schottky barriers
    • F. A. Padovani and R. Stratton, “Field and thermionic-field emission in Schottky barriers,” Solid-Stale Electron., vol. 9. p. 695, 1966.
    • (1966) Solid-Stale Electron. , vol.9 , pp. 695
    • Padovani, F.A.1    Stratton, R.2
  • 8
    • 0014441917 scopus 로고
    • Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodes
    • C. R. Crowell, “Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodes,” Solid-State Electron., vol. 12. p. 55, 1969.
    • (1969) Solid-State Electron. , vol.12 , pp. 55
    • Crowell, C.R.1
  • 10
    • 0000733562 scopus 로고
    • The Richardson constant for thermionic emission in Schottky barrier diodes
    • C. R. Crowell, “The Richardson constant for thermionic emission in Schottky barrier diodes,” Solid-State Electron., vol. 8, p. 395, 1965.
    • (1965) Solid-State Electron. , vol.8 , pp. 395
    • Crowell, C.R.1
  • 11
    • 84941870205 scopus 로고
    • Effective mass of electrons in Si
    • “Effective mass of holes in Si,” in Properties of Silicon. London. UK: INSPEC
    • D. J. Dunstan, “Effective mass of electrons in Si,” and “Effective mass of holes in Si,” in Properties of Silicon. London. UK: INSPEC, 1988.
    • (1988)
    • Dunstan, D.J.1
  • 12
    • 0001377590 scopus 로고
    • Effective mass and intrinsic concentration in silicon
    • H. D. Barber, “Effective mass and intrinsic concentration in silicon,” Solid-Slate Electron., vol. 10. p. 1039, 1967.
    • (1967) Solid-Slate Electron. , vol.10 , pp. 1039
    • Barber, H.D.1
  • 13
    • 84941865030 scopus 로고
    • Barrier heights and contact resistances: Metal/Si
    • Properties of Silicon. London, UK: INSPEC
    • K. K. Ng, “Barrier heights and contact resistances: Metal/Si,” in Properties of Silicon. London, UK: INSPEC, 1988.
    • (1988)
    • Ng, K.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.