Simulation of semiconductor devices with non-ideal metallic contacts

IEEE Transactions on Electron Devices

Volumn 44, Issue 4, 1997, Pages 679-681

  Schroeder, Dietmar ^a   Witkowski, Ulf ^a,b  

^a HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRON TUNNELING; ELECTRONS; FERMI LEVEL; HETEROJUNCTIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SIMULATORS;

HYBRID DIODE; JUNCTION BARRIER CONTROLLED SCHOTTKY DIODES; NON IDEAL METALLIC CONTACTS; THERMIONIC EMISSION; TUNNELING EFFECTS;

SEMICONDUCTOR DEVICES;

EID: 0031117192     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.563375     Document Type: Article

References (9)

1. D. Schroeder, Modeling of Interface Carrier Transport for Device Simulation. Wien, Germany: Springer, 1994.
2. D. Schroeder, T. Ostermann, and O. Kalz, "Comparison of transport models for the simulation of degenerate semiconductors," Semicond. Sci. Technol., vol. 9, pp. 364-369, 1994.
3. O. Kalz and D. Schroeder, "PARDESIM - A parallel device simulator on a transputer based MIMD-machine," in Proc. 5th Int. Conf. Simulation of Semiconductor Devices and Processes, S. Selberherr, Ed, Sept. 7-9, 1993, Vienna, pp. 245-248.
4. R. A. Zettler and A. M. Cowley, "p-n junction-Schottky barrier hybrid diode," IEEE Trans. Electron Devices, vol. ED-16, p. 58, 1969.
5. U. Witkowski and D. Schroeder, "Simulations of the forward behavior of hybrid Schottky-/pn-diodes," in Proc. 6th Int. Conf. Simulation of Semiconductor Devices and Processes, H. Ryssel, Ed, Sept. 6-8 1995, Erlangen, Germany, pp. 356-359.
6. J. Olsson, H. Norde, and U. Magnusson, "Investigation of the current-voltage behavior of a combined Schottky-p-n diode," Solid-State Electron., vol. 35, pp. 1229-1231, 1992.
7. K. Kells, General Electrothermal Semiconductor Device Simulation. Konstanz, Germany: Hartung-Gorre, 1994.
8. O. Tornblad, U. Lindefeit, and B. Breitholz, "Heat generation in Si bipolar power devices: The relative importance of various contributions," Solid-State Electron., vol. 39, pp. 1463-1471, 1996.
9. M. Rother, Philips Semiconductors, Hamburg, Germany, private communication.