Simulations of Schottky barrier diodes and tunnel transistors

Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998

Volumn 1998-October, Issue , 1998, Pages 163-165

  Matsuzawa, K ^a   Uchida, K ^a   Nishiyama, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

IONIC CONDUCTION; OHMIC CONTACTS; THERMIONIC EMISSION;

APPLICATION EXAMPLES; DOPING LEVELS; PRACTICAL MODEL; SCHOTTKY; SCHOTTKY BARRIERS; SHORT-CHANNEL EFFECT; SIMULATED RESULTS; TUNNEL TRANSISTORS;

SCHOTTKY BARRIER DIODES;

EID: 33747137525     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.1998.742737     Document Type: Conference Paper

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