A revised boundary condition for the numerical analysis of schottky barrier diodes

IEEE Electron Device Letters

Volumn 7, Issue 9, 1986, Pages 525-527

  Adams, J ^a   Tang, Ting Wei ^a  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040906487     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1986.26460     Document Type: Article

References (7)

1. C. R. Crowell and S. M. Sze, “Current transport in metal-semiconductor barriers,” Solid-State Electron., vol. 9, pp. 1035–1047, 1966.
2. S. F. Guo, “A simple model for computer simulation of Schottkybarrier barrier diodes,” Solid-State Electron., vol. 27, no. 6, pp. 537–543, 1984.
3. C. T. Chuang, “On the current-voltage characteristic of epitaxial Schottky barrier diodes,” Solid-State Electron., vol. 27, no. 4, pp. 299–304, 1984.
4. L. Wagner, “Advanced concepts in VLSI Schottky-barrier diode modelling,” in IEDM, 1982, Paper 28.3.
5. G. Baccarani and A. M. Mazzone, “Monte-Carlo simulation of current transport in forward-biased Schottky-barrier diodes,” Electron. Lett, vol. 12, no. 2, pp. 59–60, 1976.
6. S. Selberherr, Analysis and Simulation of Semiconductor Devices. New York: Springer-Verlag/Wein, 1984.
7. R. Stratton, “Diffusion of hot and cold electrons in semiconductor barriers,” Phys. Rev., vol. 126, no. 6, pp. 2002–2014, 1962.