Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy

Diamond and Related Materials

Volumn 15, Issue 4-8, 2006, Pages 618-621

  Houze F ^a   Alvarez, J ^a,b   Kleider, J P ^a   Bergonzo, P ^c   Snidero, E ^c   Tromson, D ^c  

^a UNIV PARIS SUD   (France)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c DIF   (France)

Author keywords

H termination; Local resistance; Schottky diodes; Surface conductivity

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; ELECTROCHEMICAL ELECTRODES; MICROWAVES; OXIDATION; PLASMA APPLICATIONS;

H-TERMINATION; LOCAL RESISTANCE; RECTIFICATION RATIOS; SCHOTTKY DIODES; SURFACE CONDUCTIVITY;

SCHOTTKY BARRIER DIODES;

EID: 33747019561     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.11.052     Document Type: Article

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