Capacitance-voltage studies of Al-Schottky contacts on hydrogen-terminated diamond

Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 637-639

  Garrido, J A ^a   Nebel, C E ^a   Stutzmann, M ^a   Snidero, E ^b   Bergonzo, P ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b CEA LIST   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; ELECTRICAL PROPERTY; HYDROGEN-TERMINATED DIAMOND; IN-PLANE; MODEL-BASED OPC; NEGATIVE ELECTRON AFFINITY; SCHOTTKY CONTACTS; SCHOTTKY DIODES;

CAPACITANCE; DIAMOND FILMS; DIAMONDS; ELECTRON AFFINITY; HYDROGEN; SCHOTTKY BARRIER DIODES; TWO DIMENSIONAL;

ALUMINUM;

EID: 79956014275     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1496495     Document Type: Article

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