Thickness effects on physical and ferroelectric properties of Bi3.35La0.85Ti3O12 (BLT) films with c-axis-preferred and random orientations

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 2 B, 2003, Pages

  Yeom, Seung Jin ^a   Yang, Woo Seok ^b   Kim, Nam Kyeong ^a   Kweon, Soon Yong ^a   Choi, Eun Seok ^a   Roh, Jae Sung ^a  

^a Hynix Semiconductor Inc   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FORCE; CRYSTAL ORIENTATION; FERROELECTRICITY; FILM PREPARATION; GRAIN SIZE AND SHAPE; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BAKING; BISMUTH TITANATE; FERROELECTRIC PROPERTIES; FERROELECTRIC RANDOM ACCESS MEMORY; METALORGANIC DECOMPOSITION METHOD; RANDOM ORIENTATION; THICKNESS EFFECTS;

BISMUTH COMPOUNDS;

EID: 0242416583     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.L182     Document Type: Letter

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