Ferroelectric properties of dysprosium-doped Bi4Ti3O12 thin films crystallized in various atmospheres

Transactions of Nonferrous Metals Society of China (English Edition)

Volumn 16, Issue SUPPL. 1, 2006, Pages 33-36

  Cheng, Chuan Pin ^a   Tang, Ming Hua ^a   Ye, Zhi ^a   Zhou, Yi Chun ^a   Zheng, Xue Jun ^a   Zhong, Xiang Li ^a   Hu, Zeng Shun ^a  

^a XIANGTAN UNIVERSITY   (China)

Author keywords

BDT thin films; Crystallization atmosphere; CSD

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLIZATION; FERROELECTRICITY; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURE; BDT THIN FILMS; CHEMICAL SOLUTION DEPOSITION (CSD); CRYSTALLIZATION ATMOSPHERE; FERROELECTRIC PROPERTIES; HIGH DENSITY MEMORY; MONOTONOUS FUNCTION; NONVOLATILE MEMORY; REMANENT POLARIZATION;

FERROELECTRIC THIN FILMS;

EID: 33746782998     PISSN: 10036326     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1003-6326(06)60006-X     Document Type: Article

References (13)

1. 7-x conductive interfacial layer for ferroelectric random access memory application[J]. Applied Physics Letters, 2003, 83(14): 2880-2883.
2. 2 capacitor prepared by metalorganic chemical vapor deposition at 395°C[J]. Applied Physics Letters, 2003, 83(26): 5506-5508.
3. 2(111)/Si(111) substrates[J]. Thin Solid Films, 2001, 385: 307-310.
4. 4 capping layer for 3 V or lower-voltage ferroelectric memory operation[J]. Applied Physics Letters, 2002, 81(10): 1863-1865.
5. 12 thin films prepared on Si(111) by metalorganic decomposition method[J]. Applied Physics Letters, 2001, 78(12): 1733-1735.
6. 12 thin films on different substrates[J]. Journal of Crystal Growth, 2004, 267: 110-116.
7. 12 thin films by sol-gel[J]. Materials Science and Engineering B, 2005, 122: 201-205.
8. 2/p-Si(111) by spin coating metalorganic solution decomposition method[J]. Materials Chemistry and Physics, 2004, 88: 67-70.
9. 2/Si(100) substrates by a CSD processing[J]. Journal of Crystal Growth, 2004, 270: 168-173.
10. CHON U, SHIM J S, JANG H M. Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate[J]. Journal of Applied Physics, 2003, 93(8): 4769-4775.
11. 2/Si(100) substrates by a sol-gel process[J]. Journal of Crystal Growth, 2004, 262: 327-333.
12. 12 thin films prepared by chemical solution deposition[J]. Materials Science and Engineering B, 2005, 122: 164-168.
13. 12 thin films crystallized in different environments[J]. Thin Solid Films, 2005, 471: 35-39.